Control del Factor de Landé en Hilos Cuánticos de GaAs/(Ga,Al)As mediante la Aplicación de Radiación Láser

  • Iliana M. Ramírez INSTITUTO TECNOLÓGICO METROPOLITANO, Medellín
  • Francisco E. López INSTITUTO TECNOLÓGICO METROPOLITANO, Medellín
Keywords: Landé factor, laser dressing, magnetic field, quantum well wire, semiconductors.

Abstract

We study the electronic Landé factor control by changing of both intensity and frequency intense laser field on cylindrical quantum well wire. We use the laser dressed approximation for treated the “quantum wire + laser” system as quantum wire in the absence of radiation but with parameter (electronic barrier height and electronic effective mass) renormalized by laser effects. We consider a magnetic field applied to parallel direction of symmetric axis of quantum well wire. We take into account nonparabolicity and anisotropy effects on the conduction band by Ogg-McCombe Hamiltonian.

Author Biographies

Iliana M. Ramírez, INSTITUTO TECNOLÓGICO METROPOLITANO, Medellín
Facultad de Ciencias, INSTITUTO TECNOLÓGICO METROPOLITANO, Medellín
Francisco E. López, INSTITUTO TECNOLÓGICO METROPOLITANO, Medellín
Centro de Investigación, INSTITUTO TECNOLÓGICO METROPOLITANO, Medellín
How to Cite
Ramírez, I. M., & López, F. E. (2010). Control del Factor de Landé en Hilos Cuánticos de GaAs/(Ga,Al)As mediante la Aplicación de Radiación Láser. TecnoLógicas, 49-59. https://doi.org/10.22430/22565337.468

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Published
2010-12-15
Section
Articles