Control del Factor de Landé en Hilos Cuánticos de GaAs/(Ga,Al)As mediante la Aplicación de Radiación Láser
Keywords:
Landé factor, laser dressing, magnetic field, quantum well wire, semiconductors.
Abstract
We study the electronic Landé factor control by changing of both intensity and frequency intense laser field on cylindrical quantum well wire. We use the laser dressed approximation for treated the “quantum wire + laser” system as quantum wire in the absence of radiation but with parameter (electronic barrier height and electronic effective mass) renormalized by laser effects. We consider a magnetic field applied to parallel direction of symmetric axis of quantum well wire. We take into account nonparabolicity and anisotropy effects on the conduction band by Ogg-McCombe Hamiltonian.
How to Cite
[1]
I. M. Ramírez and F. E. López, “Control del Factor de Landé en Hilos Cuánticos de GaAs/(Ga,Al)As mediante la Aplicación de Radiación Láser”, TecnoL., pp. 49–59, Dec. 2010.
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